![[Analysis Case] Evaluation of High Electron Mobility Transistors](https://image.mono.ipros.com/public/product/image/1eb/2000247144/IPROS16852435776482016420.jpeg?w=280&h=280)
[Analysis Case] Evaluation of High Electron Mobility Transistors
Evaluation of crystal coherence and compositional distribution is possible with Cs collector attached STEM.
GaN-based high electron mobility transistors, known as GaN HEMTs (High Electron Mobility Transistors), achieve a two-dimensional electron gas layer through an AlGaN/GaN heterostructure, resulting in high electron mobility. This document presents a case study of the disassembly and evaluation of commercially available GaN HEMT devices. Using HAADF-STEM, we confirmed the crystallographic integrity near the AlGaN/GaN interface. Additionally, we assessed the compositional distribution using EELS. Measurement methods: TEM, EELS. Product field: Power devices. Analysis purpose: Structural evaluation, film thickness evaluation. For more details, please download the document or contact us.
- Company：一般財団法人材料科学技術振興財団 MST
- Price：Other
![[Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT](https://image.mono.ipros.com/public/product/image/0d3/2001053862/IPROS18812954731846806019.jpeg?w=280&h=280)
